SUD19P06-60 Datasheet, PDF (3/6 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

New Product
SUD19P06-60
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
30
V_GS = 10 thru 5 V
25
4V
25
20
20
15
15
10
5
0
0
35
30
25
20
15
10
5
0
0
1800
3V
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
T_C = - 55 °C
25 °C
125 °C
5
10
15
20
25
30
V_GS - Gate-to-Source Voltage (V)
Transconductance
10
T_C = 125 °C
5
25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.12
0.10
0.08
0.06
0.04
V_GS = 4.5 V
V_GS = 10 V
0.02
0.00
0
5
10
15
20
25
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
20
1500
C_iss
1200
900
600
300
C_oss
0 ^Crss
0
10
20
30
40
50
60
V_DS - Drain-to-Source Voltage (V)
Capacitance
16
V_DS = 30 V
I_D = 10 A
12
8
4
0
0
10
20
30
40
50
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 69253
S-72191-Rev. A, 22-Oct-07
www.vishay.com
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