SUD19N20-90 Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel 200-V (D-S) 175C MOSFET

SUD19N20-90
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
3.0
100
V_GS = 10 V
2.5
I_D = 5 A
Source-Drain Diode Forward Voltage
2.0
T_J = 150_C
1.5
10
1.0
T_J = 25_C
0.5
0.0
–50 –25 0
25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature
25
20
15
10
5
1
0
0.3
0.6
0.9
1.2
V_SD – Source-to-Drain Voltage (V)
Safe Operating Area
100
Limited by r_DS(on)
10
1
T_C = 25_C
Single Pulse
10 ms
100 ms
1 ms
10 ms
100 ms
1 s, dc
0
0
25 50 75 100 125 150 175
T_C – Case Temperature (_C)
0.1
0.1
1
10
100
V_DS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1 _{Duty Cycle = 0.5}
1000
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10^–4
10^–3
www.vishay.com
4
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
10
30
Document Number: 71767
S-05233—Rev. A, 17-Dec-01