SUD19N20-90 Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 200-V (D-S) 175C MOSFET

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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
40
6V
V_GS = 10 thru 7 V
30
30
SUD19N20-90
Vishay Siliconix
Transfer Characteristics
20
10
0
0
70
60
50
40
30
20
10
0
0
2500
5V
4V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
Transconductance
T_C = –55_C
25_C
125_C
10
20
30
40
I_D – Drain Current (A)
Capacitance
2000
C_iss
1500
1000
500
C_rss
C_oss
0
0
40
80
120
160
200
V_DS – Drain-to-Source Voltage (V)
Document Number: 71767
S-05233—Rev. A, 17-Dec-01
20
10
0
0
0.20
T_C = 125_C
25_C
–55_C
1
2
3
4
5
6
V_GS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.15
0.10
V_GS = 6 V
0.05
V_GS = 10 V
0.00
0
20
10
20
30
40
I_D – Drain Current (A)
Gate Charge
16
V_DS = 100 V
I_D = 19 A
12
8
4
0
0
10
20
30
40
50
60
Q_g – Total Gate Charge (nC)
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