SUD19N20-90 Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 200-V (D-S) 175C MOSFET

New Product
SUD19N20-90
Vishay Siliconix
N-Channel 200-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.090 @ V_GS = 10 V
200
0.105 @ V_GS = 6 V
TO-252
I_D (A)
19
17.5
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized
APPLICATIONS
D Primary Side Switch
D
GDS
Top View
Order Number:
SUD19N20-90
Drain Connected to Tab
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 175_C)^b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle v 1%)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 125_C
L = 0.1 mH
T_C = 25_C
T_A = 25_C
V_DS
V_GS
I_D
I_DM
I_S
I_AR
E_AR
P_D
T_J, T_stg
200
"20
19
11
40
19
19
18
100^b
3^a
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient^a
Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. See SOA curve for voltage derating.
t v 10 sec
Steady State
Document Number: 71767
S-05233—Rev. A, 17-Dec-01
Symbol
R_thJA
R_thJC
Typical
15
40
1.3
Maximum
18
50
1.6
Unit
_C/W
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