SUD19N20-90 Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 200-V (D-S) 175C MOSFET

SUD19N20-90
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Dynamic^a
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_GS = 0 V, I_D = 250 mA
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 160 V, V_GS = 0 V
V_DS = 160 V, V_GS = 0 V, T_J = 125_C
V_DS = 160 V, V_GS = 0 V, T_J = 175_C
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 5 A
V_GS = 10 V, I_D = 5 A, T_J = 125_C
V_GS = 10 V, I_D = 5 A, T_J = 175_C
V_GS = 6 V, I_D = 5 A
V_DS = 15 V, I_D = 19 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
Turn-On Delay Time^c
Rise Time^c
Turn-Off Delay Time^c
Fall Time^c
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_GS = 0 V, V_DS = 25 V, F = 1 MHz
V_DS = 100 V, V_GS = 10 V, I_D = 19 A
V_DD = 100 V, R_L = 5.2 W
I_D ^ 19 A, V_GEN = 10 V, R_G = 2.5 W
Source-Drain Diode Ratings and Characteristic (T_C = 25_C)
Pulsed Current
I_SM
Diode Forward Voltage^b
V_SD
Source-Drain Reverse Recovery Time
t_rr
I_F = 19 A, V_GS = 0 V
I_F = 19 A, di/dt = 100 A/ms
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
Min Typ^a Max Unit
200
V
2
"100
nA
1
50
mA
250
40
A
0.075
0.090
0.190
W
0.260
0.082
0.105
35
S
1800
180
pF
80
34
42
8
nC
12
15
25
50
75
ns
30
45
60
90
50
A
0.9
1.5
V
180
250
ns
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2
Document Number: 71767
S-05233—Rev. A, 17-Dec-01