SUD17N25-165 Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel 250-V (D-S) 175C MOSFET

SUD17N25-165
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.8
100
V_GS = 10 V
2.4
I_D = 17 A
Source-Drain Diode Forward Voltage
2.0
T_J = 150_C
1.6
10
1.2
T_J = 25_C
0.8
0.4
−50 −25 0
25 50 75 100 125 150 175
T_J − Junction Temperature (_C)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature
20
1
0
0.3
0.6
0.9
1.2
V_SD − Source-to-Drain Voltage (V)
Safe Operating Area
100
16
Limited by r_DS(on)
10 ms
10
12
100 ms
8
1
1 ms
10 ms
4
T_C = 25_C
Single Pulse
100 ms, dc
0
0
25 50 75 100 125 150 175
T_C − Case Temperature (_C)
0.1
0.1
1
10
100
V_DS − Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
1000
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10^−4
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4
10^−3
10^−2
Square Wave Pulse Duration (sec)
10^−1
1
Document Number: 72851
S-40578—Rev. A, 29-Mar-04