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SUD17N25-165 Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 250-V (D-S) 175C MOSFET
New Product
SUD17N25-165
Vishay Siliconix
N-Channel 250-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
250
0.165 @ VGS = 10 V
ID (A)
17
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
APPLICATIONS
D Automotive such as
− Diesel Fuel Injection
− High-Side Switch
− Motor Drives
D
TO-252
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD17N25-165—E3
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 125_C
L = 0.1 mH
TC = 25_C
TA = 25_C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
250
"20
17
9.8
20
17
5
1.25
136b
3a
−55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambienta
Junction-to-Case (Drain)
t v 10 sec
Steady State
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. See SOA curve for voltage derating.
Document Number: 72851
S-40578—Rev. A, 29-Mar-04
Symbol
RthJA
RthJC
Typical
15
40
0.85
Maximum
18
50
1.1
Unit
_C/W
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