SUD17N25-165 Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 250-V (D-S) 175C MOSFET

New Product
SUD17N25-165
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
V_GS = 10 thru 6 V
16
16
5V
12
12
Transfer Characteristics
8
4
0
0
60
50
40
30
20
10
0
0
2800
4V
4
8
12
16
20
V_DS − Drain-to-Source Voltage (V)
Transconductance
T_C = −55_C
25_C
125_C
4
8
12
16
20
I_D − Drain Current (A)
Capacitance
2100
C_iss
1400
700
0
0
C_rss
40
C_oss
80
120
160
200
V_DS − Drain-to-Source Voltage (V)
8
4
0
0
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
0
20
T_C = 125_C
25_C
−55_C
1
2
3
4
5
6
V_GS − Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
V_GS = 10 V
4
8
12
16
20
I_D − Drain Current (A)
Gate Charge
16
V_DS = 125 V
I_D = 17 A
12
8
4
0
0
8
16 24 32 40 48 56
Q_g − Total Gate Charge (nC)
Document Number: 72851
S-40578—Rev. A, 29-Mar-04
www.vishay.com
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