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| SUD17N25-165 Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 250-V (D-S) 175C MOSFET | |||
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SUD17N25-165
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 250 V, VGS = 0 V
VDS = 250 V, VGS = 0 V, TJ = 125_C
VDS = 250 V, VGS = 0 V, TJ = 175_C
VDS = 15 V, VGS = 10 V
VGS = 10 V, ID = 14 A
VGS = 10 V, ID = 14 A, TJ = 125_C
VGS = 10 V, ID = 14 A, TJ = 175_C
VDS = 15 V, ID = 17 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 125 V, VGS = 10 V, ID = 17 A
VDD = 125 V, RL = 7.35 W
ID ^ 17 A, VGEN = 10 V, Rg = 2.5 W
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
ISM
Diode Forward Voltageb
VSD
Source-Drain Reverse Recovery Time
trr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
IF = 17 A, VGS = 0 V
IF = 17 A, di/dt = 100 A/ms
Min Typa Max Unit
250
V
2.5
4.0
"100
nA
1
50
mA
250
17
A
0.131
0.165
0.347
W
0.462
36
S
1950
160
pF
70
30
42
10
nC
10
1.6
W
15
25
130
195
ns
30
45
100
150
20
A
0.9
1.5
V
115
175
ns
www.vishay.com
2
Document Number: 72851
S-40578âRev. A, 29-Mar-04
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