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SUD15P01-52 Datasheet, PDF (4/4 Pages) Vishay Siliconix – P-Channel 8-V (D-S), 175 C MOSFET | |||
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SUD15P01-52
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
1.6
30
VGS = 4.5 V
ID = 10 A
1.4
10
1.2
1.0
Source-Drain Diode Forward Voltage
TJ = 150_C
TJ = 25_C
0.8
0.6
â50 â25 0 25 50 75 100 125 150 175
TJ â Junction Temperature (_C)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
18
15
12
9
6
3
1
0.0
0.3
0.6
0.9
1.2
1.5
VSD â Source-to-Drain Voltage (V)
100.0
Safe Operating Area
10.0
Limited
by rDS(on)
1.0
TC = 25_C
Single Pulse
100 ms
1 ms
10 ms
100 ms
dc, 1 s
0
0
25 50 75 100 125 150 175
TC â Case Temperature (_C)
0.1
0.1
1.0
10.0
VDS â Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10â4
www.vishay.com
4
10â3
10â2
10â1
1
Square Wave Pulse Duration (sec)
10
100
Document Number: 71806
S-20966âRev. B, 01-Jul-02
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