SUD15P01-52 Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 8-V (D-S), 175 C MOSFET

New Product
SUD15P01-52
Vishay Siliconix
P-Channel 8-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.052 @ V_GS = –4.5 V
–8
0.070 @ V_GS = –2.5 V
0.105 @ V_GS = –1.8 V
TO-252
I_D (A)
–15
–13
–10.5
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D Low Gate Threshold
APPLICATIONS
D Pass Transistor for LDOs
S
GDS
Top View
Order Number:
SUD15P01-52
Drain Connected to Tab
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T_J = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy^a
Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 125_C
L = 0.1 mH
T_C = 25_C
T_A = 25_C
V_DS
V_GS
I_D
I_DM
I_AR
E_AR
P_D
T_J, T_stg
–8
"8
–15
–8.7
–25
–10
5
21.4^{b, c}
1.5^c
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient^b
Junction-to-Case
Notes:
a. Duty cycle v 1%.
b. When mounted on 1” square PCB (FR-4 material).
c. See SOA curve for voltage derating.
t v 10 sec
Steady State
Symbol
R_thJA
R_thJC
Typical
40
80
5.6
Maximum
50
100
7
Unit
_C/W
Document Number: 71806
S-20966—Rev. B, 01-Jul-02
www.vishay.com
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