SUD15P01-52 Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 8-V (D-S), 175 C MOSFET

SUD15P01-52
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(on)
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
r_DS(on)
g_fs
V_GS = 0 V, I_D = –250 mA
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "8 V
V_DS = –6.4 V, V_GS = 0 V
V_DS = –6.4 V, V_GS = 0 V, T_J = 125_C
V_DS = –6.4 V, V_GS = 0 V, T_J = 175_C
V_DS = –5 V, V_GS = –4.5 V
V_DS = –5 V, V_GS = –2.5 V
V_GS = –4.5 V, I_D = –10 A
V_GS = –4.5 V, I_D = –13 A, T_J = 125_C
V_GS = –4.5 V, I_D = –13 A, T_J = 175_C
V_GS = –2.5 V, I_D = –5 A
V_GS = –1.8 V, I_D = –2 A
V_DS = –5 V, I_D = –10 A
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
Turn-On Delay Time^c
Rise Time^c
Turn-Off Delay Time^c
Fall Time^c
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_GS = 0 V, V_DS = –4 V, f = 1 MHz
V_DS = –4 V, V_GS = –4.5 V, I_D = –10 A
V_DD = –4 V, R_L = 0.22 W
I_D ] –15 A, V_GEN = –4.5 V, R_G = 2.5 W
Source-Drain Diode Ratings and Characteristics (T_C = 25_C)^b
Continuous Current
Pulsed Current
Forward Voltage^a
Reverse Recovery Time
I_s
I_SM
V_SD
I_F = –15 A, V_GS = 0 V
t_rr
I_F = –15 A, di/dt = 100 A/ms
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min Typ Max Unit
–8
–0.45
V
–0.8
"100
nA
–1
–50
mA
–150
–25
A
–10
0.043 0.052
0.065
0.075
W
0.070
0.105
16
S
1300
430
pF
245
10.5
15
1.6
nC
2
10
20
16
25
ns
30
45
25
40
–15
A
–25
–1.5
V
45
75
ns
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2
Document Number: 71806
S-20966—Rev. B, 01-Jul-02