SUD15P01-52 Datasheet, PDF (3/4 Pages) Vishay Siliconix – P-Channel 8-V (D-S), 175 C MOSFET

New Product
SUD15P01-52
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60
4.5 V
48
4V
3.5 V
36
3V
Transfer Characteristics
20
T_C = –55_C
16
25_C
125_C
12
24
2.5 V
8
12
0
0
2V
1.5 V
1V
1
2
3
4
5
V_DS – Drain-to-Source Voltage (V)
Transconductance
25
4
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20
T_C = –55_C
20
0.16
25_C
125_C
15
0.12
V_GS = 1.8 V
10
0.08
V_GS = 2.5 V
V_GS = 4.5 V
5
0.04
0
0
2000
5
10
15
20
25
V_GS – Gate-to-Source Voltage (V)
Capacitance
1600
C_iss
1200
800
400
C_rss
C_oss
0
0
2
4
6
8
V_DS – Drain-to-Source Voltage (V)
0.00
0
8
5
10
15
20
25
I_D – Drain Current (A)
Gate Charge
V_DS = 4 V
6
I_D = 10 A
4
2
0
0
4
8
12
16
20
Q_g – Total Gate Charge (nC)
Document Number: 71806
S-20966—Rev. B, 01-Jul-02
www.vishay.com
3