SUB65P04-15 Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel 40-V (D-S) 175C MOSFET

SUP/SUB65P04-15
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.0
V_GS = 10 V
I_D = 30 A
1.5
1.0
Source-Drain Diode Forward Voltage
100
T_J = 150_C
10
0.5
0
–50 –25 0
25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
Avalanche Current vs. Time
1000
100
I_AV (A) @ T_A = 25_C
10
I_AV (A) @ T_A = 150_C
1
0.1
0.00001 0.0001 0.001
0.01
0.1
1
t_in (Sec)
T_J = 25_C
1
0
0.3
0.6
0.9
1.2
V_SD – Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
60
I_D = 250 mA
55
50
45
40
35
–50 –25 0
25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
www.vishay.com S FaxBack 408-970-5600
2-4
Document Number: 71174
S-00831—Rev. A, 01-May-00