SUB65P04-15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 40-V (D-S) 175C MOSFET

SUP/SUB65P04-15
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_GS = 0 V, I_D = –250 mA
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = –40 V, V_GS = 0 V
V_DS = –40 V, V_GS = 0 V, T_J = 125_C
V_DS = –40 V, V_GS = 0 V, T_J = 175_C
V_DS = –5 V, V_GS = –10 V
V_GS = –10 V, I_D = –30 A
V_GS = –10 V, I_D = –30 A, T_J = 125_C
V_GS = –10 V, I_D = –30 A, T_J = 175_C
V_GS = –4.5 V, I_D = –20 A
V_DS = –15 V, I_D = –50 A
Input Capacitance
C_iss
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
Turn-On Delay Time^c
Rise Time^c
Turn-Off Delay Time^c
Fall Time^c
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_GS = 0 V, V_DS = –25 V, f = 1 MHz
V_DS = –20 V, V_GS = –10 V, I_D = –65 A
V_DD = –20 V, R_L = 0.3 W
I_D ] –65 A, V_GEN = –10 V, R_G = 2.5 W
Source-Drain Diode Ratings and Characteristics (T_C = 25_C)^b
Continuous Current
Pulsed Current
Forward Voltage^a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I_s
I_SM
V_SD
t_rr
I_RM(REC)
Q_rr
I_F = –65 A, V_GS = 0 V
I_F = –65 A, di/dt = 100 A/ms
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min Typ Max Unit
–40
V
–1
–3
"100
nA
–1
–50
mA
–250
–120
A
0.012 0.015
0.024
W
0.030
0.018 0.023
W
20
S
5400
640
pF
300
85
130
25
nC
15
15
25
380
580
ns
75
115
140
210
–65
A
–240
–1.2
–1.5
V
40
80
ns
2.0
4
A
0.04
0.1
mC
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Document Number: 71174
S-00831—Rev. A, 01-May-00