SUB65P04-15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 40-V (D-S) 175C MOSFET

New Product
SUP/SUB65P04-15
Vishay Siliconix
P-Channel 40-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.015 @ V_GS = –10 V
–40
0.023 @ V_GS = –4.5 V
I_D (A)
–65
–50
TO-220AB
S
TO-263
G
DRAIN connected to TAB
GD S
Top View
SUP65P04-15
G DS
Top View
SUB65P04-15
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T_J = 175_C)
Pulsed Drain Current
T_C = 25_C
T_C = 125_C
Avalanche Current
Repetitive Avalanche Energy^a
L = 0.1 mH
Power Dissipation
T_C = 25_C (TO-220AB and TO-263)
T_A = 25_C (TO-263)^b
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_AR
E_AR
P_D
T_J, T_stg
–40
"20
–65
–37
–240
–60
180
120^c
3.75
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Notes:
a. Duty cycle v 1%.
b. When mounted on 1” square PCB (FR-4 material).
c. See SOA curve for voltage derating.
PCB Mount (TO-263)^b
Free Air (TO-220AB)
Document Number: 71174
S-00831—Rev. A, 01-May-00
Symbol
R_thJA
R_thJA
R_thJC
Limit
40
62.5
1.25
Unit
_C/W
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