SUB65P04-15 Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 40-V (D-S) 175C MOSFET

New Product
SUP/SUB65P04-15
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
100
V_GS = 10 thru 7 V
6V
200
80
Transfer Characteristics
150
100
50
0
0
80
60
40
5V
4V
3, 2 V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
Transconductance
T_C = –55_C
25_C
125_C
20
60
40
T_C = 125_C
20
25_C
–55_C
0
0
1
2
3
4
5
6
V_GS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.04
0.03
0.02
V_GS = 4.5 V
0.01
V_GS = 10 V
0
0
8000
20
40
60
80
100
I_D – Drain Current (A)
Capacitance
6000
C_iss
4000
2000
0
0
C_oss
C_rss
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
Document Number: 71174
S-00831—Rev. A, 01-May-00
0
0
20
40
60
80
100 120
I_D – Drain Current (A)
Gate Charge
20
16
V_DS = 20 V
I_D = 65 A
12
8
4
0
0
40
80
120
160
Q_g – Total Gate Charge (nC)
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