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SI9953DY Datasheet, PDF (4/4 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET | |||
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Si9953DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
On-Resistance vs. Gate-to-Source Voltage
1.0
10
TJ = 150_C
TJ = 25_C
0.8
ID = 2.3 A
0.6
0.4
0.2
1
0.2
0.8
0.4 0.6 0.8
1.0 1.2 1.4 1.6
VSD â Source-to-Drain Voltage (V)
Threshold Voltage
0
0
2
4
6
8
10
VGS â Gate-to-Source Voltage (V)
Single Pulse Power
30
0.6
25
ID = 250 µA
0.4
20
0.2
15
0.0
10
â0.2
5
â0.4
â50 â25
0 25 50 75 100 125 150
TJ â Temperature (_C)
0
0.010
0.100
1
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
10 30
0.2
0.1
0.1
0.05
0.02
0.01
10â4
Single Pulse
10â3
10â2
10â1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 62.5_C/W
3. TJM â TA = PDMZthJA(t)
4. Surface Mounted
1
10
30
www.vishay.com S FaxBack 408-970-5600
4
Document Number: 70138
S-00652âRev. K, 27-Mar-00
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