SI9953DY Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

Si9953DY
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.25 @ V_GS = –10 V
–20
0.40 @ V_GS = –4.5 V
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
Top View
8 ^D1
7 ^D1
6 ^D2
5 ^D2
I_D (A)
"2.3
"1.5
S₁
G₁
S₂
G₂
D₁ D₁
P-Channel MOSFET
D₂ D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
–20
"20
"2.3
"1.8
"10
–1.7
2.0
1.3
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
R_thJA
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70138
S-00652—Rev. K, 27-Mar-00
Limit
62.5
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
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