SI9953DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

Si9953DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
15
10
V_GS = 10 – 7 V
12
6V
8
9
6
5V
6
4
Transfer Characteristics
T_C = –55_C
25_C
125_C
3
0
0
1.0
0.8
4V
3V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
V_GS = 4.5 V
0.6
0.4
0.2
V_GS = 10 V
0
0
2
4
6
8
I_D – Drain Current (A)
Gate Charge
10
8
V_DS =10 V
I_D = 2.3 A
6
2
0
0
1
2
3
4
5
6
7
V_GS – Gate-to-Source Voltage (V)
Capacitance
700
600
500
400
C_oss
300
C_iss
200
C_rss
100
0
0
5
10
15
20
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
1.6
V_GS = 10 V
I_D = 1.0 A
1.2
4
0.8
2
0.4
0
0
2
4
6
8
Q_g – Total Gate Charge (nC)
Document Number: 70138
S-00652—Rev. K, 27-Mar-00
0
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
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