SI9953DY Datasheet, PDF (2/4 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

Si9953DY
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Diode Forward Voltage^b
Dynamic^a
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = –16 V, V_GS = 0 V
V_DS = –16 V, V_GS = 0 V, T_J = 55_C
V_DS v –5 V, V_GS = –10 V
V_DS v –5 V, V_GS = –4.5 V
V_GS = –10 V, I_D = 1 A
V_GS = –4.5 V, I_D = 0.5 A
V_DS = –15 V, I_D = –2.3 A
I_S = –1.7 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
V_DS = –10 V, V_GS = –10 V, I_D = –2.3 A
V_DD = –10 V, R_L = 10 W
I_D ^ –1 A, V_GEN = –10 V, R_G = 6 W
I_F = 1.7 A, di/dt = 100 A/ms
Min Typ^a Max Unit
–1.0
V
"100
nA
–2
mA
–25
–10
A
–1.5
0.12
0.25
W
0.22
0.40
2.5
S
–0.8
–1.2
V
6.7
25
1.3
nC
1.6
10
40
12
40
20
90
ns
10
50
70
100
www.vishay.com S FaxBack 408-970-5600
2
Document Number: 70138
S-00652—Rev. K, 27-Mar-00