SI9925DY Datasheet, PDF (4/4 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Si9925DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
40
On-Resistance vs. Gate-to-Source Voltage
0.18
T_J = 150_C
10
T_J = 25_C
0.15
0.12
0.09
I_D = 5 A
0.06
0.03
1
0
0.4
0.8
1.2
1.6
V_SD - Source-to-Drain Voltage (V)
Threshold Voltage
0.4
0.00
0
2
4
6
8
V_GS - Gate-to-Source Voltage (V)
Single Pulse Power
40
0.2
32
I_D = 250 µA
- 0.0
24
- 0.2
16
- 0.4
8
- 0.6
- 50
0
50
100
150
T_J - Temperature (_C)
0
0.01
0.1
1
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
10 30
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
10 ^{- 3}
Single Pulse
10 ^{- 2}
10 ^{- 1}
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 62.5_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
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4
Document Number: 70145
S-03950—Rev. N, 26-May-03