SI9925DY Datasheet, PDF (3/4 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Si9925DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
40
32
V_GS = 5.5, 5, 4.5, 4, 3.5 V
32
3V
24
24
16
16
2.5 V
Transfer Characteristics
T_C = - 55_C
25_C
125_C
8
0
0
0.20
2V
1.5 V
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
8
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
1600
Capacitance
0.16
0.12
0.08
V_GS = 2.5 V
V_GS = 3 V
0.04
0.00
0
V_GS = 4.5 V
6
12
18
24
30
I_D - Drain Current (A)
Gate Charge
4.5
4.0
V_DS = 6 V
3.5
I_D = 5 A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
2
4
6
8
10
Q_g - Total Gate Charge (nC)
Document Number: 70145
S-03950—Rev. N, 26-May-03
1200
C_iss
800
C_oss
400
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
1.6
V_GS = 10 V
I_D = 5 A
1.2
0.8
0.4
0.0
- 50
0
50
100
150
T_J - Junction Temperature (_C)
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