SI9925DY Datasheet, PDF (1/4 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Si9925DY
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
20
r_DS(on) (W)
0.05 @ V_GS = 4.5 V
0.06 @ V_GS = 3.0 V
0.08 @ V_GS = 2.5 V
I_D (A)
5.0
4.2
3.6
SO-8
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Top View
Ordering Information: Si9925DY
Si9925DY-T1 (with Tape and Reel)
D₁ D₁
D₂ D₂
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
"12
5.0
4.0
48
1.7
2
1.3
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
R_thJA
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70145
S-03950—Rev. N, 26-May-03
Limit
62.5
Unit
_C/W
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