SI9802DY Datasheet, PDF (4/4 Pages) Vishay Siliconix – Dual N-Channel Reduced Qg, Fast Switching MOSFET

Si9802DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
30
On-Resistance vs. Gate-to-Source Voltage
0.15
10
T_J = 150_C
T_J = 25_C
0.12
I_D = 4.5 A
0.09
0.06
0.03
1
0
0.4
0.2
–0.0
–0.2
–0.4
0.2 0.4 0.6
0.8 1.0 1.2 1.4
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
I_D = 250 mA
0
0
2
4
6
8
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power
50
40
30
20
–0.6
10
–0.8
–50
0
50
100
150
T_J – Temperature (_C)
0
0.01
0.1
1
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
10 30
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
10^–2
10^–1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 62.5_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
www.vishay.com S FaxBack 408-970-5600
4
Document Number: 70625
S-51303—Rev. A, 19-Dec-96