SI9802DY Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual N-Channel Reduced Qg, Fast Switching MOSFET

Si9802DY
Vishay Siliconix
Dual N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.055 @ V_GS = 4.5 V
20
0.075 @ V_GS = 3.0 V
I_D (A)
"4.5
"3.8
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
Top View
8 ^D1
7 ^D1
6 ^D2
5 ^D2
D₁ D₁
D₂ D₂
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
"12
"4.5
"3.6
"25
"1.7
2
1.3
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient^a
Parameter
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70625
S-51303—Rev. A, 19-Dec-96
Symbol
R_thJA
Limit
62.5
Unit
_C/W
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