SI9802DY Datasheet, PDF (2/4 Pages) Vishay Siliconix – Dual N-Channel Reduced Qg, Fast Switching MOSFET

Si9802DY
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "12 V
V_DS = 20 V, V_GS = 0 V
V_DS = 20 V, V_GS = 0 V, T_J = 70_C
V_DS w 5 V, V_GS = 5 V
V_GS = 4.5 V, I_D = 4.5 A
V_GS = 3.0 V, I_D = 3.8 A
V_DS = 10 V, I_D = 4.5 A
I_S =1.7 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 10 V, V_GS = 4.5 V, I_D = 4.5 A
V_DD = 10 V, R_L = 10 W
I_D ^ 1 A, V_GEN = 4.5 V, R_G = 6 W
I_F = 1.7 A, di/dt = 100 A/ms
Min Typ Max Unit
0.6
V
"100
nA
1
mA
5
25
A
0.044
0.055
W
0.055
0.075
11.5
S
0.73
1.2
V
5.5
10
1.2
nC
1.5
12
25
30
60
23
50
ns
9
20
60
100
www.vishay.com S FaxBack 408-970-5600
2
Document Number: 70625
S-51303—Rev. A, 19-Dec-96