SI9802DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – Dual N-Channel Reduced Qg, Fast Switching MOSFET

Si9802DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
25
25
V_GS = 5 thru 3.5 V
20
3V
20
15
15
2.5 V
10
10
Transfer Characteristics
T_C = –55_C
25_C
125_C
5
0
0
0.30
2V
1.5 V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.25
0.20
0.15
0.10
V_GS = 3 V
0.05
0
0
V_GS = 4.5 V
5
10
15
20
25
I_D – Drain Current (A)
Gate Charge
4.5
4.0
V_DS = 10 V
3.5
I_D = 4.5 A
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
4
5
6
Q_g – Total Gate Charge (nC)
5
0
0
1200
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS – Gate-to-Source Voltage (V)
Capacitance
900
600
C_iss
C_oss
300
C_rss
0
0
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
1.6
V_GS = 4.5 V
I_D = 4.5 A
1.2
0.8
0.4
0
–50
0
50
100
150
T_J – Junction Temperature (_C)
Document Number: 70625
S-51303—Rev. A, 19-Dec-96
www.vishay.com S FaxBack 408-970-5600
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