SI9435BDY_05 Datasheet, PDF (4/6 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si9435BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50
On-Resistance vs. Gate-to-Source Voltage
0.20
T_J = 150_C
10
T_J = 25_C
0.16
0.12
I_D = 5.7 A
0.08
0.04
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Threshold Voltage
0.6
0.4
I_D = 250 mA
0.2
0.0
0.00
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
150
120
90
60
−0.2
30
−0.4
−50 −25
0 25 50 75 100 125 150
T_J − Temperature (_C)
0
10^−3
10^−2
10^−1
1
10
Time (sec)
Safe Operating Area, Junction-to-Foot
100
*Limited by r_DS(on)
10
1 ms
1
10 ms
0.1
T_C = 25_C
Single Pulse
100 ms
1s
10 s
dc
0.01
0.1
1
10
100
V_DS − Drain-to-Source Voltage (V)
*V_GS u minimum V_GS at which r_DS(on) is specified
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Document Number: 72245
S-50153—Rev. C, 31-Jan-05