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SI9435BDY_05 Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET | |||
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P-Channel 30-V (D-S) MOSFET
Si9435BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.042 @ VGS = â10 V
â30
0.055 @ VGS = â6 V
0.070 @ VGS = â4.5 V
ID (A)
â5.7
â5.0
â4.4
FEATURES
D TrenchFETr Power MOSFET
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si9435BDY
Si9435BDY-T1 (with Tape and Reel)
Si9435BDYâE3 (Lead (Pb)-Free)
Si9435BDY-T1âE3 (Lead (Pb)-Free with Tape and Reel)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
â30
"20
â5.7
â4.1
â4.6
â3.2
â30
â2.3
â1.1
2.5
1.3
1.6
0.8
â55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1â x 1â FR4 Board.
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
40
70
24
Maximum
50
95
30
Unit
V
A
W
_C
Unit
_C/W
Document Number: 72245
S-50153âRev. C, 31-Jan-05
www.vishay.com
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