SI9435BDY_05 Datasheet, PDF (2/6 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si9435BDY
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ^a Max Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Diode Forward Voltage^b
Dynamic^a
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = −250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = −30 V, V_GS = 0 V
V_DS = −30 V, V_GS = 0 V, T_J = 70_C
V_DS v −10 V, V_GS = −10 V
V_DS v −5 V, V_GS = −4.5 V
V_GS = −10 V, I_D = −5.7 A
V_GS = −6 V, I_D = −5 A
V_GS = −4.5 V, I_D = −4.4 A
V_DS = −15 V, I_D = −5.7 A
I_S = −2.3 A, V_GS = 0 V
−1.0
−3.0
V
"100
nA
−1
mA
−5
−20
A
−5
0.033
0.042
0.043
0.055
W
0.056
0.070
13
S
−0.8
−1.1
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = −15 V, V_GS = −10 V, I_D = −3.5 A
V_DD = −15 V, R_L = 15 W
I_D ^ −1 A, V_GEN = −10 V, R_g = 6 W
I_F = −1.2 A, di/dt = 100 A/ms
16
24
2.3
nC
4.5
8.8
W
14
25
14
25
42
70
ns
30
50
30
60
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
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2
Document Number: 72245
S-50153—Rev. C, 31-Jan-05