SI9435BDY_05 Datasheet, PDF (3/6 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si9435BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
V_GS = 10 thru 6 V
5V
25
25
Transfer Characteristics
20
20
15
4V
15
10
5
0
0
3V
1
2
3
4
5
V_DS − Drain-to-Source Voltage (V)
10
T_C = 125_C
5
25_C
−55_C
0
0
1
2
3
4
5
V_GS − Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.15
1100
Capacitance
0.12
0.09
0.06
V_GS = 4.5 V
V_GS = 6 V
0.03
V_GS = 10 V
0.00
0
4
8
12
16
20
I_D − Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 3.5 A
8
880
C_iss
660
440
C_oss
220
C_rss
0
0
5
10
15
20
25
30
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 5.7 A
1.4
6
1.2
4
1.0
2
0.8
0
0.0
3.2
6.4
9.6
12.8
16.0
Q_g − Total Gate Charge (nC)
Document Number: 72245
S-50153—Rev. C, 31-Jan-05
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
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