SI8457DB Datasheet, PDF (4/11 Pages) Vishay Siliconix – P-Channel 12 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.10
Si8457DB
Vishay Siliconix
T_J = 150 °C
10
T_J = 25 °C
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.9
0.8
0.7
0.08
I_D = 3 A
0.06
0.04
0.02
T_J = 125 °C
T_J = 25 °C
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
80
60
0.6
40
I_D = 250 μA
0.5
20
0.4
0.3
- 50 - 25 0
25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001 0.01 0.1
1
10
Time (s)
100
600
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
ID Limited
10
IDM Limited
1 ms
1
0.1
T_A = 25 °C
10 ms
100 ms
1s
10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
S15-1692-Rev. B, 20-Jul-15
4
Document Number: 64267
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