English
Language : 

SI8457DB Datasheet, PDF (2/11 Pages) Vishay Siliconix – P-Channel 12 V (D-S) MOSFET
◁
www.vishay.com
Si8457DB
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient a,b
Maximum Junction-to-Ambient c,d
t=5s
t=5s
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Maximum under steady state conditions is 85 °C/W.
c. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
d. Maximum under steady state conditions is 175 °C/W.
SYMBOL
RthJA
RthJA
TYPICAL
35
85
MAXIMUM
45
110
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VDS
VDS/TJ
VGS(th)/TJ
VGS = 0 V, ID = -250 μA
ID = -250 μA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = -250 μA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance a
Dynamic b
IDSS
ID(on)
RDS(on)
gfs
VDS = -12 V, VGS = 0 V
VDS = -12 V, VGS = 0 V, TJ = 70 °C
VDS  -5 V, VGS = -4.5 V
VGS = -4.5 V, ID = -3 A
VGS = -2.5 V, ID = -3 A
VGS = -1.8 V, ID = -1 A
VDS = -6 V, ID = -3 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
Qg
VDS = -6 V, VGS = 0 V, f = 1 MHz
VDS = -6 V, VGS = -8 V, ID = -3 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
VDS = -6 V, VGS = -4.5 V, ID = -3 A
VGS = -0.1 V, f = 1 MHz
VDD = -6 V, RL = 2 
ID  -3 A, VGEN = -4.5 V, Rg = 1 
VDD = -6 V, RL = 2 
ID  -3 A, VGEN = -8 V, Rg = 1 
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TA = 25 °C
IS = -3 A, VGS = 0 V
IF = -3 A, dI/dt = 100 A/μs, TJ = 25 °C
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
MIN.
-12
-
-
-0.4
-
-
-
-5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
MAX.
UNIT
-
-5
1.8
-
-
-
-
-
0.0150
0.0190
0.0280
26
-
-
-
-0.9
± 100
-1
-10
-
0.0190
0.0234
0.0350
-
V
mV/°C
V
nA
μA
A

S
2900
-
715
-
pF
620
-
62
93
37
56
nC
4.2
-
10
-
16
-

27
50
60
120
300
600
210
420
ns
7
15
13
25
400
800
215
430
-
-2.3 c
A
-
-25
-0.72
-1.2
V
240
480
ns
640
1280
nC
93
-
ns
147
-
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1692-Rev. B, 20-Jul-15
2
Document Number: 64267
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 ▷