SI8457DB Datasheet, PDF (3/11 Pages) Vishay Siliconix – P-Channel 12 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
25
10
V_GS = 5 V thru 2 V
20
8
15
6
Si8457DB
Vishay Siliconix
T_C = 25 °C
10
4
5
V_GS = 1.5 V
2
T_C = 125 °C
T_C = - 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.10
0.08
0.06
V_GS = 1.8 V
0.04
0.02
V_GS = 2.5 V
V_GS = 4.5 V
0
0
5
10
15
20
25
I_D - Drain Current (A)
On-Resistance vs. Drain Current
8
0
0.0
0.5
1.0
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
4000
3500
C_iss
3000
2500
2000
1500
1000
C_rss
500
C_oss
0
0
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.4
I_D = 3 A
6
V_DS = 6 V
V_DS = 3 V
4
V_DS = 9.6 V
2
1.3
V_GS = 4.5 V, 2.5 V; I_D = 3 A
1.2
1.1
V_GS = 1.8 V; I_D = 3 A
1.0
0.9
0
0
10 20 30 40 50 60 70
Q_g - Total Gate Charge (nC)
Gate Charge
0.8
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
S15-1692-Rev. B, 20-Jul-15
3
Document Number: 64267
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