SI8402DB_08 Datasheet, PDF (4/10 Pages) Vishay Siliconix – 20-V N-Channel 1.8-V (G-S) MOSFET

Si8402DB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.2
80
0.1
I_D = 250 µA
60
0.0
- 0.1
40
- 0.2
20
- 0.3
- 0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
I_DM Limited
2
1
Duty Cycle = 0.5
10
P(t) = 0.001
1 ID(on)
Limited
P(t) = 0.01
0.1
T_A = 25 °C
Single Pulse
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
0.01
10^{- 4}
Notes:
P_DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 72 °C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-3
10^-2
10^-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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4
Document Number: 72657
S-82118-Rev. C, 08-Sep-08