SI8402DB_08 Datasheet, PDF (3/10 Pages) Vishay Siliconix – 20-V N-Channel 1.8-V (G-S) MOSFET

Si8402DB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.06
2500
0.05
0.04
0.03
0.02
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
0.01
0.00
0
5
10
15
20
25
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
5
V_DS = 10 V
4
I_D = 1 A
3
2
1
2000
C_iss
1500
1000
500
C_oss
0
C_rss
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.4
1.3
V_GS = 4.5 V
I_D = 1 A
1.2
1.1
1.0
0.9
0
0
30
4
8
12
16
20
Q_g - Total Gate Charge (nC)
Gate Charge
0.8
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.08
10
T_J = 150 °C
0.06
0.04
I_D = 1 A
T_J = 25 °C
0.02
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 72657
S-82118-Rev. C, 08-Sep-08
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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3