SI8402DB_08 Datasheet, PDF (1/10 Pages) Vishay Siliconix – 20-V N-Channel 1.8-V (G-S) MOSFET

Si8402DB
Vishay Siliconix
20-V N-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.037 at V_GS = 4.5 V
20
0.039 at V_GS = 2.5 V
0.043 at V_GS = 1.8 V
I_D (A)
7.3
7.1
6.8
MICRO FOOT
Bump Side View
Backside View
3
D
2
D
8402
xxx
S
4
G
1
Device Marking: 8402
xxx = Date/Lot Traceability Code
Ordering Information: Si8402DB-T1-E1 (Lead (Pb)-free)
FEATURES
• TrenchFET^® Power MOSFET
• MICRO FOOT^® Chipscale Packaging
Reduces Footprint Area Profile (0.62 mm) and
On-Resistance Per Footprint Area
RoHS
COMPLIANT
APPLICATIONS
• PA, Battery and Load Switch for Portable Devices
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V
V_GS
±8
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 70 °C
I_D
7.3
5.3
5.9
4.3
A
I_DM
30
Continuous Source Current (Diode Conduction)^a
I_S
2.3
1.2
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
2.77
1.47
1.77
0.94
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
Package Reflow Conditions^b
IR/Convection
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
Symbol
R_thJA
R_thJF
Typical
35
72
16
Maximum
45
85
20
Unit
°C/W
Document Number: 72657
S-82118-Rev. C, 08-Sep-08
www.vishay.com
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