SI7962DP Datasheet, PDF (4/6 Pages) Vishay Siliconix – Dual N-Channel 40-V (D-S) MOSFET

Si7962DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.8
100
Single Pulse Power
0.4
80
I_D = 250 mA
−0.0
60
−0.4
40
−0.8
−1.2
20
−1.6
−50 −25
0 25 50 75 100 125 150
T_J − Temperature (_C)
0
0.001 0.01 0.1
1
10
Time (sec)
Safe Operating Area, Junction-To-Ambient
100
*r_DS(on) Limited
I_DM Limited
P(t) = 0.0001
10
1
I_D(on)
Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
0.1
T_A = 25_C
Single Pulse
P(t) = 1
P(t) = 10
0.01
dc
BV_DSS Limited
0.1
1
10
100
V_DS − Drain-to-Source Voltage (V)
*V_GS u minimum V_GS at which r_DS(on) is specified
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
100 600
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^−4
10^−3
10^−2
10^−1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 60_C/W
3. T_JM − T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72914
S-42058—Rev. B, 15-Nov-04