SI7962DP Datasheet, PDF (1/6 Pages) Vishay Siliconix – Dual N-Channel 40-V (D-S) MOSFET

Si7962DP
Vishay Siliconix
Dual N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
40
r_DS(on) (W)
0.017 @ V_GS = 10 V
I_D (A)
11.1
Q_g(Typ)
46.2
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr Package
D Dual MOSFET for Space Savings
D 100% R_g Tested
D High Threshold Voltage At High Temperature
PowerPAK SO-8
6.15 mm
D1
8
D1
7
D2
6
D2
5
S1
1
G1
2
5.15 mm
S2
3
G2
4
Bottom View
Ordering Information: Si7962DP-T1—E3
D₁
D₂
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
L = 0.1 mH
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
40
"20
11.1
7.1
8.9
5.7
40
2.9
1.2
30
45
3.5
1.4
2.2
0.9
−55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJC
Typical
26
60
2.2
Maximum
35
85
2.7
Unit
V
A
mJ
W
_C
Unit
_C/W
Document Number: 72914
S-42058—Rev. B, 15-Nov-04
www.vishay.com
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