SI7962DP Datasheet, PDF (2/6 Pages) Vishay Siliconix – Dual N-Channel 40-V (D-S) MOSFET

Si7962DP
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 40 V, V_GS = 0 V
V_DS = 40 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 11.1 A
V_DS = 15 V, I_D = 11.1 A
I_S = 2.9 A, V_GS = 0 V
3.4
4.5
V
"100
nA
1
5
mA
30
A
0.0135 0.017
W
31
S
0.8
1.2
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resostamce
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 20 V, V_GS = 10 V, I_D = 11.1 A
f = 1 MHz
V_DD = 20 V, R_L = 20 W
I_D ^ 1 A, V_GEN = 10 V, R_g = 6 W
I_F = 2.9 A, di/dt = 100 A/ms
46.2
70
16
nC
9.6
1.1
2.3
3.5
W
22
35
15
25
55
70
ns
15
25
35
60
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
40
32
24
16
8
0
0
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2
Output Characteristics
V_GS = 10 thru 7 V
6V
5V
1
2
3
4
5
V_DS − Drain-to-Source Voltage (V)
Transfer Characteristics
40
32
24
16
8
0
0
T_C = 125_C
25_C
−55_C
1
2
3
4
5
6
7
V_GS − Gate-to-Source Voltage (V)
Document Number: 72914
S-42058—Rev. B, 15-Nov-04