SI7962DP Datasheet, PDF (3/6 Pages) Vishay Siliconix – Dual N-Channel 40-V (D-S) MOSFET

Si7962DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.020
On-Resistance vs. Drain Current
4000
Capacitance
0.015
0.010
V_GS = 10 V
C_iss
3200
2400
1600
0.005
800
C_oss
C_rss
0.000
0
5 10 15 20 25 30 35 40
I_D − Drain Current (A)
Gate Charge
10
V_DS = 20 V
I_D = 11.1 A
8
0
0
8
16
24
32
40
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 11.1 A
1.4
6
1.2
4
1.0
2
0.8
0
0
10
20
30
40
50
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
40
T_J = 150_C
10
T_J = 25_C
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
I_D = 11.1 A
0.03
0.02
0.01
1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD − Source-to-Drain Voltage (V)
Document Number: 72914
S-42058—Rev. B, 15-Nov-04
0.00
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
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