SI7921DN Datasheet, PDF (4/5 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET

Si7921DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS T_A = 25°C, unless otherwise noted
0.6
30
25
0.4
20
0.2
I_D = 250 µA
15
0.0
10
–0.2
5
–0.4
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (˚C)
Threshold Voltage
100
r_DS(on) Limited
0
0.001 0.01
0.1
1
10
100 600
Time (sec)
Single Pulse Power, Juncion-To-Ambient
I_DM Limited
10
P(t) = 0.0001
1
I_D(on)
Limited
0.1
T_A = 25˚C
Single Pulse
BV_DSS Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.01
0.1
1
10
100
V_DS – Drain-to-Source Voltage (V)
Safe Operating Area, Junction-To-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Notes:
P_DM
Single Pulse
t₁
1.
2.
t₂
Duty Cycle, D
Per Unit Base
=
=
t₁
t₂
R_thJA
=
75˚C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^–3
10^–2
10^–1
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
www.vishay.com
4
Document Number: 72341
S-51210–Rev. B, 27-Jun-05