SI7921DN Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS T_A = 25°C, unless otherwise noted
0.30
800
Si7921DN
Vishay Siliconix
0.25
0.20
0.15
0.10
0.05
V_GS = 4.5 V
V_GS = 10 V
0.00
0
4
8
12
16
20
I_D – Drain Current (A)
On-Resistance vs. Drain Current
600
C_iss
400
200
C_rss
0
0
5
C_oss
10
15
20
25
30
V_DS – Drain-to-Source Voltage (V)
Capacitance
10
V_DS = 15 V
I_D = 5.1 A
8
1.6
V_GS = 10 V
I_D = 5.1 A
1.4
6
1.2
4
1.0
2
0.8
0
0
2
4
6
8
10
12
Q_g – Total Gate Charge (nC)
Gate Charge
20
T_J = 150˚C
10
T_J = 25˚C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD – Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
–50 –25 0 25 50 75 100 125 150
T_J – Junction Temperature (˚C)
On-Resistance vs. Junction Temperature
0.30
0.25
0.20
I_D = 5.1 A
0.15
0.10
0.05
0.00
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72341
S-51210–Rev. B, 27-Jun-05
www.vishay.com
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