SI7921DN Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET

New Product
Dual P-Channel 30-V (D-S) MOSFET
Si7921DN
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.063 @ V_GS = –10 V
–30
0.110 @ V_GS = –4.5 V
I_D (A)
–5.1
–3.8
FEATURES
• TrenchFET^® Power MOSFETS
• New Low Thermal Resistance PowerPAK^®
Package
APPLICATIONS
• Portable
– Battery Switch
– Load Switch
Pb-free
Available
RoHS*
COMPLIANT
PowerPAK 1212-8
3.30 mm
D1
8
D1
7
D2
6
D2
5
S1
1
G1
2
3.30 mm
S2
3
G2
4
Bottom View
Ordering Information: Si7921DN-T1
Si7921DN–T1–E3 (Lead (Pb)–free)
S₁
S₂
G₁
G₂
D₁
P-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25°C, unless otherwise noted
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
–30
V
V_GS
±20
Continuous Drain Current (T_J = 150°C)^a
T_A = 25°C
T_A = 85°C
I_D
–5.1
–3.7
–3.7
–2.7
A
Pulsed Drain Current
I_DM
–20
Continuous Source Current (Diode Conduction)^a
I_S
–2.1
–1.1
Maximum Power Dissipation^a
T_A = 25°C
T_A = 85°C
P_D
2.5
1.3
1.3
0.85
W
Operating Junction and Storage Temperature Range
T_J, T_stg
–55 to 150
°C
Soldering Recommendations (Peak Temperature)^b,c
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^a
t ≤ 10 sec
Steady State
R_thJA
40
75
50
94
°C/W
Maximum Junction-to-Case
Steady State
R_thJC
5.6
7
Notes
a. Surface Mounted on 1“ x 1“ FR4 Board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 72341
S-51210–Rev. B, 27-Jun-05
www.vishay.com
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