SI7911DN Datasheet, PDF (4/5 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

Si7911DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
30
0.3
25
Single Pulse Power
0.2
20
I_D = 250 mA
0.1
15
0.0
10
- 0.1
5
- 0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0
0.001 0.01
0.1
1
10
Time (sec)
Safe Operating Area, Junction-To-Ambient
100
r_DS(on) Limited
I_DM Limited
10
P(t) = 0.0001
1
0.1
0.01
0.1
I_D(on)
Limited
T_A = 25_C
Single Pulse
BV_DSS Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
1
10
100
V_DS - Drain-to-Source Voltage (V)
100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
Single Pulse
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 75_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72340
S-31612—Rev. A, 11-Aug-03