SI7911DN Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

New Product
Si7911DN
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.051 @ V_GS = - 4.5 V
- 20
0.067 @ V_GS = - 2.5 V
0.094 @ V_GS = - 1.8 V
I_D (A)
- 5.7
- 5.0
- 4.2
FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D New Low Thermal Resistance PowerPAKr
Package
APPLICATIONS
D Portable
- PA Switch
- Battery Switch
- Load Switch
PowerPAK 1212-8
S₁
S₂
3.30 mm
D1
8
D1
7
D2
6
D2
5
S1
1
G1
2
3.30 mm
S2
3
G2
4
Ordering Information: Si7911DN-T1
Bottom View
G₁
D₁
P-Channel MOSFET
G₂
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
- 20
"8
- 5.7
- 4.2
- 4.1
- 3.0
- 20
- 2.1
- 1.1
2.5
1.3
1.3
0.85
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72340
S-31612—Rev. A, 11-Aug-03
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJC
Typical
40
75
5.6
Maximum
50
94
7
Unit
_C/W
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