SI7911DN Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

New Product
Si7911DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.20
1500
Capacitance
0.16
0.12
V_GS = 1.8 V
0.08
0.04
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
4
8
12
16
20
I_D - Drain Current (A)
Gate Charge
5
V_DS = 10 V
I_D = 5.7 A
4
1200
900
C_iss
600
300
C_rss
0
0
4
C_oss
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 5.7 A
1.4
3
1.2
2
1.0
1
0.8
0
0
2
4
6
8
10
12
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
10
T_J = 150_C
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.20
0.16
0.12
I_D = 1.1 A
0.08
I_D = 5.7 A
T_J = 25_C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 72340
S-31612—Rev. A, 11-Aug-03
0.04
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
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