SI7911DN Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

Si7911DN
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = - 250 mA
V_DS = 0 V, V_GS = "8 V
V_DS = - 16 V, V_GS = 0 V
V_DS = - 16 V, V_GS = 0 V, T_J = 85_C
V_DS v - 5 V, V_GS = - 4.5 V
V_GS = - 4.5 V, I_D = - 5.7 A
V_GS = - 2.5 V, I_D = - 5.0 A
V_GS = - 1.8 V, I_D = - 1.1 A
V_DS = - 6 V, I_D = - 5.7 A
I_S = - 2.3 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = - 6 V, V_GS = - 4.5 V, I_D = - 5.7 A
V_DD = - 10 V, R_L = 10 W
I_D ^ - 1 A, V_GEN = - 4.5 V, R_G = 6 W
I_F = - 2.1 A, di/dt = 100 A/ms
Min
Typ
Max Unit
- 0.40
- 1.0
V
"100
nA
-1
mA
-5
- 20
A
0.040
0.051
0.054
0.067
W
0.075
0.094
14
S
- 0.8
- 1.2
V
9.5
15
1.6
nC
2.5
7.2
W
20
30
35
55
70
105
ns
40
60
25
50
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V_GS = 5 thru 2.5 V
16
12
2V
8
1.5 V
4
1V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
www.vishay.com
2
Transfer Characteristics
20
T_C = - 55_C
16
25_C
12
125_C
8
4
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
Document Number: 72340
S-31612—Rev. A, 11-Aug-03