SI7901EDN Datasheet, PDF (4/5 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

Si7901EDN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
On-Resistance vs. Gate-to-Source Voltage
0.14
0.12
10
0.10
T_J = 150_C
T_J = 25_C
0.08
0.06
I_D = 6.3 A
0.04
0.02
1
0
0.3
0.6 0.9
1.2
1.5 1.8
V_SD – Source-to-Drain Voltage (V)
0.00
0
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
Threshold Voltage
0.4
0.3
I_D = 800 mA
Single Pulse Power, Junction-to-Ambient
50
40
0.2
30
0.1
20
0.0
10
–0.1
–0.2
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0.001 0.01
0.1
1
10
100 600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
www.vishay.com
4
Single Pulse
10^–3
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 75_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Document Number: 71430
S-03710—Rev. A, 14-May-01